Substrat zum Züchten von wurtzitartigen Kristallen und Herstellungsverfahren dafür und Halbleiterbauelement

Substrat pour cristal de type wurtzite et son procédé de fabrication et dispositif de semi-conducteur

Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device

Abstract

A laminated structure comprises a first layer comprising a crystal with six-fold symmetry, and a second layer comprising a metal oxynitride crystal formed on the first layer, wherein the second layer comprises at least one element selected from the group consisting of In, Ga, Si, Ge and Al, N, O and Zn, as main elements, and wherein the second layer has in-plane orientation.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (3)

    Publication numberPublication dateAssigneeTitle
    JP-H06196757-AJuly 15, 1994Nichia Chem Ind Ltd, 日亜化学工業株式会社Method of growing indium gallium nitride semiconductor
    US-2003176001-A1September 18, 2003Hiroyuki Fukuyama, Kazuhiro Nagata, Wataru NakaoSingle crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device
    US-2006051554-A1March 09, 2006Kazuhide Kumakura, Masanobu Hiroki, Toshiki MakimotoSubstrate for nitride semiconductor growth

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle